• EUV branch beamline is relatively a new beamline at Singapore Synchrotron Light Source (SSLS) commissioned in March 2017
• Beamline was funded by NRF with a budget of ~3M S$
• HV Reflectometer designed for EUV mask (up to 6”x6”) characterization
• Available spectral range is 70-110 eV
• Beamline shares monochromator with another beamline at SSLS called SINS beamline

Parameter	Values/info
Spectral resolution (E/ΔE) at 13.5 nm	~1.5.10-3 (50 um slits, 130 l/mm grat.)
Spectral range	70-110 eV (11.3-17.7 nm)
Spot size	3.1 mm x 1 mm (13.5 nm)
Incident power	at 13.5 nm
Angular acceptance	0.5-1 mrad (vert.), 10 mrad (horiz.)
Photon Flux	~2·109 photons/s·mm2 at 13.5 nm
Filter wheel	Si, Zr (300 nm each, self-standing)
Detector	Si photodiode (OptoDiode SXUV100)
Sample stage	3 movements (X,Y,Z) 1 angle (θ)
Detector stage	1 movement (Xd), 1 angle (θd)
Available scans	R vs λ, R vs θ, θ-2θ, Scatterometry, T vs λ, T vs θ (future)
Average linear polarization 70-110 eV	To be determined
Average circular polarization 70-110 eV	To be determined

Other Beamline Parameters: Covering 11-25 nm range (110-50 eV) Holder for 6” x 6” optics Measurements: I. Reflectometry: R or T vs λ R or T vs θ I. Scatterometry Available filters: Si, Zr Base pressure: 3x10-8 Torr Excellent match with data obtained from Advanced Light Source, Berkeley, California

Quality of measurements ML Centroid Repeatability 5 pm ML Reflectance Repeatability 0.1%    Current and Future Applications Characterization of EUV Multilayers New Absorbers Roughness/Scattering of Thin Films New Buffer Layers Actinic Defect Inspection Many others!

 

 

 

 

 

 

 

 

 

 

Si edge calibrated with Au O1 edge photo spectroscopy in SINS beamline

 

Plot displays the inflexion point wavelength of the S-like fitting curves

 

Scan across Si L2 edge (x11)

λ scan from 12.2-12.6 nm

Step 0.005 nm, Si filter

V. Slits 100 μm

S-like curves fitted to data

 

Same plot measured 10 times without change in stages position

 

 

Sample DQE630007 same spot (x10)

 

λ scan from 12.8-14 nm

Step 0.02 nm, Si filter

V. Slits 150 μm

 

 

 

Stages position changed after each scan; direct and reflected beam were measured

 

 

 

Sample DQE630007 (x3)

λ scan from 12.8-14 nm

Step 0.02 nm, Si filter

V. Slits 150 μm

 

 

Mask was unloaded from reflectometer and loaded 2 times

 

 

Sample DQE630007, same spot (x3)

λ scan from 12.8-14 nm

Step 0.02 nm, Si filter

 

Rodriguez-De Marcos, L., Shenbaga, S. M. P., Bin Leong, O., Das, P. K., Breese, M. B. H., & Rusydi, A. (2020). Optical constants and absorption properties of Te and TeO thin films in the 13-14 nm spectral range. OPTICS EXPRESS, 28(9), 12922-12935. doi:10.1364/OE.381883